VTE1285H Excelitas Technologies Sensors, VTE1285H Datasheet
VTE1285H
Manufacturer Part Number
VTE1285H
Description
EMITTER, IR, 100 MA, 1.5 VOLT, 880NM
Manufacturer
Excelitas Technologies Sensors
Datasheet
1.VTE1285H.pdf
(1 pages)
Specifications of VTE1285H
Lead Free Status / Rohs Status
RoHS Compliant part
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
DESCRIPTION
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.
ABSOLUTE MAXIMUM RATINGS @ 25°C
Maximum Temperatures
Continuous Power Dissipation:
Maximum Continuous Current:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Bullet Package — 880 nm
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
Refer to General Product Notes, page 2.
Part Number
VTE1285H
Storage and Operating:
Derate above 30°C:
Derate above 30°C:
RoHS Compliant
Min.
3.0
mW/cm
E
e
2
Typ.
5.5
Irradiance
distance
mm
36
PACKAGE DIMENSIONS
Condition
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
Diameter
Output
mm
6.4
(unless otherwise noted)
Intensity
Radiant
mW/sr
Min.
117
39
I
e
(See also GaAlAs curves, pages 108-110)
Maximum Reverse Voltage:
Maximum Reverse Current @ V
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
Lead Soldering Temperature:
Phone: 877-734-6786 Fax: 450-424-3413
Total Power
Rise: 1.0 µs Fall: 1.0 µs
(1.6 mm from case, 5 seconds max.)
mW
Typ.
CASE 62 T-1¾ (5 mm) BULLET
P
20
O
CHIP SIZE: .015" x .015"
inch (mm)
(Pulsed)
Current
F
Test
= 20 mA
100
mA
I
FT
VTE1285H
R
= 5V:
Typ.
1.5
Forward Drop
@ I
Volts
V
F
FT
www.perkinelmer.com/opto
Max.
2.0
5.0V
10 µA
880 nm
23 pF
260°C
Half Power Beam
Angle
Typ.
±8°
1/2