MCP6022-E/SN Microchip Technology Inc., MCP6022-E/SN Datasheet - Page 3

no-image

MCP6022-E/SN

Manufacturer Part Number
MCP6022-E/SN
Description
DUAL 2.3V 10 MHZ OP, E TEMP
Manufacturer
Microchip Technology Inc.
Datasheet

Specifications of MCP6022-E/SN

Amplifier Type
General Purpose, Low Noise, Low Offset Voltage, Rail-to-Rail
Bandwidth
10 MHz
Common Mode Rejection Ratio
90
Current, Input Bias
640 pA
Current, Input Offset
±1 pA
Current, Output
±30 mA
Current, Supply
±30 mA
Harmonic Distortion
0.00053 %
Number Of Amplifiers
Dual
Package Type
SOIC-8
Slew Rate
7
Temperature, Operating, Range
-40 to +125 °C
Voltage, Gain
110 dB
Voltage, Input
2.2 to 2.8 V
Voltage, Noise
8.7 nV/sqrt Hz
Voltage, Offset
±250 μV
Voltage, Output, High
2480 mV
Voltage, Output, Low
2480 mV
Voltage, Supply
2.5 to 5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP6022-E/SN
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Company:
Part Number:
MCP6022-E/SN
Quantity:
10
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Settling Time, 0.2%
Slew Rate
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +1 V/V, R
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +100 V/V
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z Time
Hysteresis
OUT
OUT
V
V
DD
DD
Parameters
/2, R
/2, R
Parameters
L
L
= 10 k to V
= 10 k to V
L
= 600
DD
DD
/2 and C
/2 and C
THD+N
THD+N
THD+N
THD+N
THD+N
t
GBWP
SETTLE
Sym
PM
SR
E
e
i
ni
ni
ni
L
L
= 60 pF.
= 60 pF.
I
O(LEAK)
V
Sym
I
I
t
V
CSH
t
HYST
V
CSL
I
OFF
Min
ON
SS
IH
IL
0.8 V
0.00053
0.00064
A
A
0.0014
0.0009
0.005
V
-1.0
Min
= +25°C, V
Typ
250
= +25°C, V
7.0
2.9
8.7
-2
10
65
SS
3
DD
-0.05
0.01
0.01
0.01
0.01
Typ
0.6
2
Max
DD
DD
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
0.2 V
V
Max
2.0
10
nV/ Hz f = 10 kHz
DD
fA/ Hz f = 1 kHz
µVp-p
Units
MHz
V/µs
MCP6021/1R/2/3/4
DD
ns
%
%
%
%
%
°
Units
µA
µA
µA
µA
µs
µs
V
V
V
G = +1, V
V
V
V
V
V
V
V
f = 0.1 Hz to 10 Hz
G = +1
OUT
DD
OUT
DD
OUT
OUT
OUT
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
CS = V
CS = V
CS = V
CS = V
G = +1, V
CS = 0.2V
G = +1, V
CS = 0.8V
V
= 0.25V to 3.25V (1.75V ± 1.50V
= 0.25V to 3.25V (1.75V ± 1.50V
= 4V
= 4V
= 4V
DD
SS
SS
= GND, V
= GND, V
= 5.0V, Internal Switch
OUT
P-P
P-P
P-P
SS
DD
DD
DD
, V
, V
, V
= 100 mV
IN
IN
DD
DD
DD
DD
DD
Conditions
= V
= V
to V
to V
Conditions
CM
CM
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
SS
SS
OUT
OUT
= V
= V
,
,
p-p
DD
DD
DS21685C-page 3
= 0.45V
= 0.05V
/2,
/2,
DD
DD
time
time
PK
PK
),
),

Related parts for MCP6022-E/SN