HFA06TB120PBF Vishay PCS, HFA06TB120PBF Datasheet

HFA06TB120PBF

Manufacturer Part Number

HFA06TB120PBF

Description

Diode, HEXFRED, 1200V 6A, TO-220AC

Manufacturer

Vishay PCS

Datasheet

1.HFA06TB120PBF.pdf (7 pages)

Specifications of HFA06TB120PBF

Capacitance, Junction

14 pF

Configuration

Common Cathode

Current, Forward

6 A

Current, Surge

80 A

Package Type

TO-220AC

Power Dissipation

62.5 W

Primary Type

Rectifier

Resistance, Thermal, Junction To Case

2 K/W

Speed, Switching

Ultrafast

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-55 to +150 °C

Time, Recovery

26 ns

Voltage, Forward

3 V

Voltage, Reverse

1200 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HFA06TB120PBF

Manufacturer:

Quantity:

9 000

Current page: 1 of 7
Download datasheet (110Kb)

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94038

Revision: 25-Jul-08

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Cathode to anode voltage

Maximum continuous forward current

Single pulse forward current

Maximum repetitive forward current

Maximum power dissipation

Operating junction and storage temperature range

(rec)M

/dt (typical) at 125 °C

at 6 A at 25 °C

RRM

(maximum)

(typical)

F(AV)

(typical)

Cathode

TO-220AC

cathode

Base

Ultrafast Soft Recovery Diode, 6 A

Anode

For technical questions, contact: diodes-tech@vishay.com

100 A/µs

1200 V

116 nC

150 °C

26 ns

3.0 V

4.4 A

6 A

SYMBOL

HEXFRED

FSM

FRM

, T

Stg

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA06TB120 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 1200 V and 6 A continuous current, the

HFA06TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED

extremely low values of peak recovery current (I

does not exhibit any tendency to “snap-off” during the

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED HFA06TB120 is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

TEST CONDITIONS

= 100 °C

= 25 °C

= 100 °C

portion of recovery. The HEXFRED features combine to

RRM

Vishay High Power Products

HFA06TB120PbF

- 55 to + 150

VALUES

1200

62.5

product line features

www.vishay.com

UNITS

°C

RRM

RoHS*

COMPLIANT

Available

) and

Related parts for HFA06TB120PBF

HFA06TB120PBF Summary of contents

Page 1

... SYMBOL TEST CONDITIONS 100 ° FSM I FRM ° 100 ° Stg For technical questions, contact: diodes-tech@vishay.com HFA06TB120PbF Vishay High Power Products RRM rr ® product line features VALUES UNITS 1200 62 150 www.vishay.com Available RoHS* COMPLIANT ) and RRM °C 1 ...

Page 2

... HFA06TB120PbF Vishay High Power Products ELECTRICAL SPECIFICATIONS (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 t rr2 I RRM1 Peak recovery current ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.001 0.01 0 Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodes-tech@vishay.com HFA06TB120PbF Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° 100 ° 0 °C J 0.01 ...

Page 4

... HFA06TB120PbF Vishay High Power Products 110 100 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 ® HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA06TB120PbF Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA06TB120PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions Part marking information www.vishay.com 6 ® HEXFRED Ultrafast Soft Recovery Diode 120 PbF ® HEXFRED family 2 - Process designator subs. elec. irrad subs. platinum 3 - Current rating ( Package outline (TB = TO-220 2 lead Voltage rating (120 = 1200 V) ...

Page 7

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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