2SK3780-01 Fuji Semiconductor, 2SK3780-01 Datasheet
2SK3780-01
Manufacturer Part Number
2SK3780-01
Description
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 29 Milliohms; ID 73A; TO-247; PD 410W; VGS +/-3
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3780-01.pdf
(1 pages)
Specifications of 2SK3780-01
Channel Type
N-Channel
Current, Drain
73 A
Gate Charge, Total
80 nC
Package Type
TO-247
Polarization
N-Channel
Power Dissipation
410 W
Resistance, Drain To Source On
29 Milliohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
60 ns
Time, Turn-on Delay
40 ns
Transconductance, Forward
24 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3780-01
Manufacturer:
FUJITSU
Quantity:
12 500
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