MBRB10H100-E3/45 General Semiconductor / Vishay, MBRB10H100-E3/45 Datasheet
MBRB10H100-E3/45
Manufacturer Part Number
MBRB10H100-E3/45
Description
Rectifier; TO-263AB; 10 A; 0.77 V; 10000 V/us; 2.7 degC/W
Manufacturer
General Semiconductor / Vishay
Datasheet
1.MBRB10H100-E345.pdf
(3 pages)
Specifications of MBRB10H100-E3/45
Configuration
Dual Common Cathode
Current, Forward
10 A
Current, Reverse
6 mA
Current, Surge
250 A
Package Type
TO-263AB
Primary Type
Schottky Barrier
Resistance, Thermal, Junction To Case
2.7 °C/W
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-65 to +175 °C
Voltage, Forward
0.64 V
Voltage, Reverse
100 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse current at tp = 2 µs, 1 kHz
Voltage rate of change (rated V
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
MBR10H90
MBR10H100
PIN 1
PIN 2
TO-220AC
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
CASE
K
1
MBRB10H90
MBRB10H100
PIN 2
PIN 1
TO-263AB
2
R
)
C
High-Voltage Schottky Rectifier
1
= 25 °C unless otherwise noted)
2
HEATSINK
ITO-220AC
MBRF10H90
MBRF10H100
PIN 1
PIN 2
K
90 V, 100 V
175 °C
0.64 V
4.5 µA
250 A
10 A
1
2
MBR(F,B)10H90 & MBR(F,B)10H100
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
SYMBOL
T
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AC and
• Component in accordance to RoHS 2002/95/EC
V
J
V
I
dV/dt
I
I
V
, T
F(AV)
V
RRM
FSM
RWM
RRM
peak of 245 °C (for TO-263AB package)
ITO-220AC package)
and WEEE 2002/96/EC
DC
AC
STG
supplies,
Vishay General Semiconductor
MBR10H90
90
90
90
freewheeling
- 65 to + 175
10 000
1500
250
0.5
10
MBR10H100
100
100
100
diodes,
UNIT
V/µs
dc-to-dc
°C
V
V
V
A
A
A
V
1
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MBRB10H100-E3/45 Summary of contents
Page 1
... High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC ITO-220AC 2 1 MBR10H90 MBRF10H90 MBR10H100 MBRF10H100 PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB MBRB10H90 MBRB10H100 PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS I F(AV) V RRM I FSM max. J MAXIMUM RATINGS ( °C unless otherwise noted) ...
Page 2
... Note: (1) Pulse test: 300 µs pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AC MBR10H100-E3/45 ITO-220AC MBRF10H100-E3/45 TO-263AB MBRB10H100-E3/45 TO-263AB MBRB10H100-E3/81 (1) TO-220AC MBR10H100HE3/45 ITO-220AC MBRF10H100HE3/45 TO-263AB MBRB10H100HE3/45 TO-263AB MBRB10H100HE3/81 Note: (1) Automotive grade AEC Q101 qualified ...
Page 3
MBR(F,B)10H90 & MBR(F,B)10H100 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.154 (3.91) DIA. 0.370 (9.40) 0.148 (3.74) DIA. 0.360 (9.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.350 (8.89) 0.625 (15.87) ...