DS1230AB-70+ Dallas Semiconductor, DS1230AB-70+ Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/1/182/dallas_semiconductor_sml.jpg)
DS1230AB-70+
Manufacturer Part Number
DS1230AB-70+
Description
RAM NV 256K 5% VTP-70NS
Manufacturer
Dallas Semiconductor
Datasheet
1.DS1230Y-200.pdf
(7 pages)
Specifications of DS1230AB-70+
Capacitance, Input
5 pF
Capacitance, Output
5 pF
Current, Input, Leakage
±1 μA
Current, Operating
85 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
256K
Interface
Parallel Bus
Memory Type
Non-Volatile SRAM
Organization
32K×8
Package Type
740 EMOD
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Address Hold
5
Time, Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
5 V
Voltage, Input, Low
0.8 V
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
PARAMETER
Read Cycle
Time
Access Time
Valid
Valid
Output Active
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
Output Active
from
Data Setup
Time
Data Hold Time
OE
CE
OE
AC ELECTRICAL CHARACTERISTICS (cont'd)
to Output
to Output
or
WE
WE
CE
to
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
DS1230AB-120
MIN
DS1230Y-120
120
120
90
15
50
10
5
5
0
5
5
0
MAX
120
120
60
35
35
5 of 13
DS1230AB-150
MIN
DS1230Y-150
150
150
100
15
60
10
5
5
0
5
5
0
MAX
150
150
70
35
35
MIN
DS1230AB-200
200
200
100
DS1230Y-200
15
80
10
5
5
0
5
5
0
MAX
200
100
200
35
35
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1230Y/AB
NOTES
12
13
12
13
5
5
3
5
5
4