S1G-E3/61T General Semiconductor / Vishay, S1G-E3/61T Datasheet
S1G-E3/61T
Manufacturer Part Number
S1G-E3/61T
Description
RECTIFIER, 1A, 400V, SM
Manufacturer
General Semiconductor / Vishay
Datasheet
1.S1G-E361T.pdf
(3 pages)
Specifications of S1G-E3/61T
Capacitance, Junction
12 pF
Current, Forward
1 A
Current, Reverse
50 μA
Current, Surge
40 A
Package Type
DO-214AC (SMA)
Primary Type
Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
1.8 μs
Voltage, Forward
1.1 V
Voltage, Reverse
400 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S1G-E3/61T
Manufacturer:
Vishay Semiconductors
Quantity:
25 706
Company:
Part Number:
S1G-E3/61T
Manufacturer:
DELTA
Quantity:
3 323
Part Number:
S1G-E3/61T
Manufacturer:
VISHAY/威世
Quantity:
20 000
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive peak reverse avalanche energy
at 25 °C, I
Operating junction and storage temperature range
AS
T
V
I
J
I
F(AV)
E
= 1 A, L = 10 mH
FSM
RRM
V
I
max.
AS
R
F
DO-214AC (SMA)
Surface Mount Glass Passivated Rectifier
A
= 25 °C unless otherwise noted)
50 V to 1000 V
1.0 µA, 5.0 µA
40 A, 30 A
150 °C
1.0 A
1.1 V
5 mJ
SYMBOL
T
V
J
V
I
I
V
F(AV)
E
, T
FSM
RRM
RMS
DC
AS
STG
FEATURES
TYPICAL APPLICATIONS
For
power
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
S1A
SA
50
35
50
peak of 260 °C
and WEEE 2002/96/EC
use
S1B
100
100
SB
70
supplies,
Vishay General Semiconductor
in
S1D
200
140
200
SD
40
general
- 55 to + 150
S1G
400
280
400
SG
1.0
inverters,
5
purpose
S1J
600
420
600
SJ
S1A thru S1M
S1K
800
560
800
converters
SK
rectification
30
1000
1000
S1M
700
SM
UNIT
mJ
°C
V
V
V
A
A
and
of
1
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S1G-E3/61T Summary of contents
Page 1
... RRM RMS V 50 100 DC I F(AV) I FSM STG S1A thru S1M Vishay General Semiconductor in general purpose rectification supplies, inverters, converters S1D S1G S1J S1K S1M 200 400 600 800 1000 140 280 420 560 700 200 400 600 800 1000 1 150 ...
Page 2
... Figure 2. Maximum Non-Repetitive Peak Forward Surge Current S1D S1G S1J S1K 1.1 1.0 5.0 50 1.8 12 S1D S1G S1J S1K DELIVERY MODE 1800 7" diameter plastic tape and reel 7500 13" diameter plastic tape and reel 1800 7" diameter plastic tape and reel 7500 13" ...
Page 3
° Pulse Width = 300 µs 0 Duty Cycle 0.01 0.4 0.8 1.2 Instantaneous Forward Voltage (V Figure 3. Typical Instantaneous Forward Characteristics 125 ° ...