DF10M-E3/45 General Semiconductor / Vishay, DF10M-E3/45 Datasheet - Page 3

• Manufacturer Part Number: DF10M-E3/45
• Description: Rectifier, Miniature Glass Passivated Single-Phase; 1000 V; 1; PCB Mount
• Manufacturer: General Semiconductor / Vishay

Specifications of DF10M-E3/45

• Capacitance, Junction: 25 pF
• Configuration: Single Phase
• Current Squared Time Rating: 10
• Current, Forward: 1 A
• Current, Reverse: 500 μA
• Current, Surge: 50 A
• Package Type: DFM
• Primary Type: Bridge Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -50 to +150 °C
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 1000 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
T
J
J
= 25 °C
0.8
= 125 °C
40
0.045 (1.14)
0.035 (0.89)
0.130 (3.30)
0.120 (3.05)
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.0
60
0.023 (0.58)
0.018 (0.46)
1.2
80
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
1.4
100
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.075 (1.90)
0.055 (1.39)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.315 (8.00)
0.285 (7.24)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
0.1
DF005M thru DF10M
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Reverse Voltage (V)
0.013 (0.33)
t - Heating Time (s)
10
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
100
100
3