VTB8440H Excelitas Technologies Sensors, VTB8440H Datasheet - Page 2

• Manufacturer Part Number: VTB8440H
• Description: SILICON PHOTODIODES
• Manufacturer: Excelitas Technologies Sensors

Specifications of VTB8440H

• Active Area: 0.008 sq.in.
• Angle, Response: ±50 °
• Capacitance, Junction: 1 nF
• Current, Dark: 2000 pA
• Current, Short Circuit: 45 μA
• Package Type: Case 21
• Primary Type: Photo
• Resistance, Shunt: 0.07
• Spectral Application Range: 320 to 1100
• Spectral Sensitivity: 0.1
• Temperature, Operating: -20 to +75 °C
• Voltage, Breakdown: 40 V
• Voltage, Open Circuit: 490 mV
• Lead Free Status / Rohs Status: RoHS Compliant part

VTB Process Photodiodes
FEATURES
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TYPICAL CHARACTERISTIC CURVES @ 25°C (UNLESS OTHERWISE NOTED)
Enhanced UV to IR spectral range
Integral IR rejection filters available
Response @ 220 nm, 0.06 A/W, typical with UV window
Response @ 365 nm, 0.14 A/W typical
High open circuit voltage @ low light levels
1 to 2% linearity over 7 to 9 decades
Very low dark current & high shunt resistance
Absolute Spectral Response
BLUE ENHANCED, ULTRA HIGH DARK RESISTANCE
VTB PROCESS
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PRODUCT DESCRIPTION
This series of P on N silicon planar photodiodes have been
designed to maximize their response through the visible part of
the spectrum. Those units with UV transmitting windows also
exhibit excellent response in the UV region and are
characterized at 220 nm.
“B” series devices have a built-in infrared rejection filter for those
applications where a detector is needed that approximates the
human eye. Typical transmission of wavelengths greater than
750 nm is less than 3% when measured with an incandescent
source operating at 2850 K.
Diodes made with the VTB process are primarily intended for
use in the photovoltaic mode but may be used with a small
reverse bias. All photodiodes in this series exhibit very high
shunt resistance. This characteristic leads to very low offsets
when the diodes are used in high gain transimpedance op-amp
circuits.
Absolute Spectral Response “B” Series (Filtered)