BAS16-V-GS08 Vishay / Small Signal & Opto Products (SSP), BAS16-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: BAS16-V-GS08
• Description: SMALL SIGNAL DIODE, 100V, 250MA, 4NS, SOT-23
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of BAS16-V-GS08

• Capacitance: 4 pF
• Configuration: Single
• Current, Forward: 150 mA
• Current, Reverse: 1 μA
• Current, Surge: 1 A
• Package Type: SOT-23
• Power Dissipation: 350 mW
• Primary Type: Switching
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: –55 to +150 °C
• Thermal Resistance, Junction To Ambient: 357 K/W
• Time, Reverse Recovery: 6 ns
• Voltage, Forward: 715 mV
• Voltage, Repetitive Peak Reverse: 75 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

BAS16-V
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Junction ambient
Junction and storage
temperature range
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
14356
Figure 1. Forward Current vs. Forward Voltage
1000
0.01
100
Parameter
Parameter
0.1
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
= 100 °C
V
F
- Forward Voltage (V)
on ceramic substrate
8 mm x 10 mm x 0.7 mm
I
I
I
I
V
V
V
V
I
V
F
F
F
F
F
25 °C
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA to I
= 75 V
= 75 V, T
= 25 V, T
= 0, f = 1 MHz
= 6 V, R
Test condition
Test condition
L
j
j
= 150 °C
= 150 °C
= 100 Ω
R
= 1 mA,
Symbol
C
V
V
V
V
I
I
I
t
R
R
R
rr
F
F
F
F
D
T
Symbol
j
R
Figure 2. Reverse Current vs. Junction Temperature
14357
= T
thJA
10000
stg
1000
100
10
1
0
Min
V
25
R
= 20 V
T
j
50
– Junction Temperature (°C)
- 55 to + 150
75 100 125 150 175 200
Value
Typ.
357
Document Number 85539
Max
1.25
715
855
50
30
1
1
4
6
Rev. 1.5, 09-Mar-06
K/W
Unit
°C
Unit
mV
mV
µA
µA
µA
pF
ns
V
V