SLD-70C2A SILONEX, SLD-70C2A Datasheet

SLD-70C2A

Manufacturer Part Number

SLD-70C2A

Description

Photodiode, Planar; Clear Epoxy Dome Package; 700 muA (Typ.); 0.40 V (Typ.)

Manufacturer

SILONEX

Datasheet

1.SLD-70C2A.pdf (1 pages)

Specifications of SLD-70C2A

Active Area

9.8 sq.mm

Angle, Response

60 °

Capacitance, Junction

180 pF

Chip Active Area

9.8 sq.mm

Current, Dark

100 nA

Current, Dark, Reverse

100 nA (Max.)

Current, Short Circuit

700 μA

Diameter, Lead

0.50 mm to 0.52 mm

Length, Lead

38 mm (Nom.)

Package Type

Epoxy Dome

Primary Type

Photo

Sensitivity Spectral Range

400 to 1100 nm

Spectral Application Range

400 to 1100

Temperature Coefficient

+0.2 %⁄°C (Typ.)

Temperature, Operating

-20 to +75 °C

Temperature, Operating, Maximum

75 °C

Temperature, Operating, Minimum

-20 °C

Time, Fall

6 μs

Time, Rise

4 μs

Voltage, Breakdown

50 V

Voltage, Breakdown, Reverse

50 V (Min.)

Voltage, Open Circuit

0.4 V

Lead Free Status / Rohs Status

RoHS Compliant part

Current page: 1 of 1
Download datasheet (53Kb)

Features

Description

The planar photodiode is designed to operate in either

photoconductive or photovoltaic modes. High sensitivity

and low dark current allow use in even low irradiance

applications. The photodiode is supplied on a ceramic

base with a clear epoxy dome package.

Absolute Maximum Ratings

Storage Temperature

Operating Temperature

Soldering Temperature (3)

Notes: (1) Ee = source @ 2854 K.

Electrical Characteristics

Specifications subject to change without notice.

QF-84

Symbol

Planar photodiode

Low capacitance

Fast switching time

Low leakage current

Linear response vs irradiance

Multiple dark current ranges available

1/2

(2) Ee = source @

(3) >2 mm from case for < 5 sec.

Reverse Dark Current:

Maximum Sensitivity Wavelength

Reverse Breakdown Voltage

Sensitivity Spectral Range

Acceptance Half Angle

Junction Capacitance

Open Circuit Voltage

Short Circuit Current

Temp. Coef., I

Parameter

Rise Time

Fall Time

= 880 nm

=25 C unless otherwise noted)

SLD-70C2C

SLD-70C2D

-20 C to +75 C

SLD-70C2A

SLD-70C2B

SLD-70C2E

260 C

MIN

450

400

TYP

0.40

+0.2

700

180

930

100°

Chip Size = 3.6 mm X 3.6 mm

Active Area = 9.8 sq.mm.

50°

60°

70°

80°

90°

1.0

7.2

40°

0.8

MAX

1100

100

Clear Epoxy

Directional Sensitivity Characteristics

30°

Optical

0.6

6.3

UNITS

20°

%/ C

0.4

deg

10°

max.

Ee=25mw/cm

(1)

(off center-line)

3.4

1.0

0.8

0.6

0.4

0.2

0.0

=100 A

=0V, Ee=25mW/cm

=100mV, Ee=0

=5V, Ee=0

=0, Ee=0, f=1MHz

=5V, R

20°

TEST CONDITIONS

Planar Photodiode

Red dot

1.9

Dimensions in mm.(+/- 0.2)

38 nom.

40°

0.50 - 0.52

SLD-70C2

=1k

Half Angle = 60°

60°

(1)

80°

(2)

Cathode

Anode

100° 120°

(1)

5.1

Related parts for SLD-70C2A

Related keywords

SLD-70C2A datasheet
SLD-70C2A data sheet
SLD-70C2A pdf datasheet
SLD-70C2A component
SLD-70C2A part
SLD-70C2A distributor
SLD-70C2A RoHS
SLD-70C2A datasheet download