SKM 400 GB 123 D Sindopower / Semikron, SKM 400 GB 123 D Datasheet - Page 2

• Manufacturer Part Number: SKM 400 GB 123 D
• Description: IGBT; D-56; IGBT; 1200 V; 400 A; 1200 V; 20 V; 5.5 V (Typ.)
• Manufacturer: Sindopower / Semikron
• Type: Standardr

Specifications of SKM 400 GB 123 D

• Capacitance, Gate: 22 nF
• Current, Collector: 400 A
• Energy Rating: 78 mJ
• Fall Time: 80 ns
• Operating And Storage Temperature: –40 to +150 °C
• Package Type: D56
• Polarity: N-Channel
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.05 K/W
• Switching Loss: 38 mJ
• Time, Rise: 115 ns
• Transistor Type: IGBT
• Voltage, Breakdown, Collector To Emitter: 1200 V
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 2.5 V
• Voltage, Gate Threshold, Range: 5.5 V (Typ.)
• Voltage, Gate To Source: ±20 V
• Voltage, Saturation, Collector To Emitter: 1200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

SKM 400GB123D
IGBT Modules
SKM 400GB123D
Features
Typical Applications
2
SEMITRANS
GB
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Characteristics
Symbol
Inverse Diode
Module
11-09-2006 RAA
Conditions
min.
typ.
© by SEMIKRON
max.
Units