SS26-E3/52T General Semiconductor / Vishay, SS26-E3/52T Datasheet - Page 3

• Manufacturer Part Number: SS26-E3/52T
• Description: Rectifier, Schottky; 2 A; 0.7 V; 0.4 mA (Max.); DO-214AA (SMB); 150 degC
• Manufacturer: General Semiconductor / Vishay

Specifications of SS26-E3/52T

• Current, Forward: 2 A
• Current, Reverse: 10 mA
• Current, Surge: 75 A
• Package Type: DO-214AA (SMB)
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -65 to +150 °C
• Voltage, Forward: 0.7 V
• Voltage, Reverse: 60 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
Figure 4. Typical Reverse Current Characteristics
0
0
T
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
0.2
T
T
T
A
A
A
Instantaneous Forward Voltage (V)
= 125 °C
= 75 °C
= 25 °C
20
0.4
T
J
0.6
= 125 °C
40
T
J
0.060 (1.52)
0.030 (0.76)
= 25 °C
0.077 (1.95)
0.086 (2.20)
0.8
0.084 (2.13)
0.096 (2.44)
Pulse Width = 300 µs
1 % Duty Cycle
60
1.0
1.2
SS22 - SS24
SS25 & SS26
SS22 - SS24
SS25 & SS26
80
DO-214AA (SMB)
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
1.4
Cathode Band
100
1.6
0.008 (0.2)
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
1000
100
10
0.1
Mounting Pad Layout
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
SS22 - SS24
SS25 & SS26
0.220 REF
Reverse Voltage (V)
1
(2.159 MAX.)
0.085 MAX.
SS22 thru SS26
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
3