MCP2150-I/SS Microchip Technology Inc., MCP2150-I/SS Datasheet - Page 25
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MCP2150-I/SS
Manufacturer Part Number
MCP2150-I/SS
Description
IRDA PROTOCOL HANDLER PLUS ENDEC FOR DTE APPS
Manufacturer
Microchip Technology Inc.
Datasheet
1.MCP2150-ISS.pdf
(52 pages)
Specifications of MCP2150-I/SS
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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4.0
Absolute Maximum Ratings†
Ambient Temperature under bias ........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on V
Voltage on RESET with respect to V
Voltage on all other pins with respect to V
Total Power Dissipation
Max. Current out of V
Max. Current into V
Input Clamp Current, I
Output Clamp Current, I
Max. Output Current sunk by any Output pin.......................................................................................................... 25 mA
Max. Output Current sourced by any Output pin..................................................................................................... 25 mA
†
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
2002 Microchip Technology Inc.
Note 1: Power Dissipation is calculated as follows:
ELECTRICAL CHARACTERISTICS
P
DD
DIS
with respect to V
= V
DD
DD
SS
IK
pin ..................................................................................................................................... 250 mA
x {I
OK
(1)
pin .................................................................................................................................. 300 mA
(VI < 0 or VI > V
DD
................................................................................................................................... 800 mW
(V0 < 0 or V0 > V
-
SS
I
OH
......................................................................................................... -0.3 V to +6.5 V
SS
} +
.................................................................................................... -0.3 V to +14 V
DD
SS
{(V
)
............................................................................... –0.3 V to (V
DD
DD
)
-V
OH
Preliminary
) x I
OH
} + (V
OL
x I
OL
)
MCP2150
DS21655B-page 25
DD
+ 0.3 V)
20 mA
20 mA