2SK3533-01 Fuji Semiconductor, 2SK3533-01 Datasheet
2SK3533-01
Manufacturer Part Number
2SK3533-01
Description
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.54 Ohms; ID +/-7A; TO-220AB; PD 225W; VGS +/-
Manufacturer
Fuji Semiconductor
Datasheet
1.2SK3533-01.pdf
(1 pages)
Specifications of 2SK3533-01
Channel Type
N-Channel
Current, Drain
±7 A
Gate Charge, Total
25 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
225 W
Resistance, Drain To Source On
1.54 Ohms
Temperature, Operating, Maximum
+150 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
22 ns
Transconductance, Forward
8.2 S
Voltage, Breakdown, Drain To Source
900 V
Voltage, Forward, Diode
0.9 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3533-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3533-01
Super FAP-G Series
*1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph
*3 I
FUJI POWER MOSFET
Item
Thermalcharacteristics
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
F
= <
-I
D
, -di/dt=50A/µs, Vcc BV
off
on
= <
DSS
c
Symbol
=25°C unless otherwise specified)
, Tch 150°C
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
ch
stg
DSX *5
AS
D
DS
GS
DS
R
R
Symbol
= <
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
*1
*4
*2
*3
*4 VDS 900V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=10.1mH T
I
I
-di/dt=100A/µs
V
V
R
V
V
V
D
D
I
I
D
F
F
channel to ambient
channel to case
<
D
D
=
DS
GS
CC
GS
=7A V
+150
CC
GS
GS
=7A V
= 250 µ A
= 250 µ A
DS
DS
GS
=7A
=3.5A
=3.5A
900
900
±28
±30
269.5
225
=25V
=0V
=600V I
=10
=450V
=10V
±7
40
=900V V
=720V V
=10V
=±30V
7
5
2.02
GS
N-CHANNEL SILICON POWER MOSFET
GS
*2 Tch 150°C
*5 V
V
V
=0V T
=0V
V
ch
GS
DS
D
DS
V
V
GS
GS
=3.5A
=25°C
=10V
=25V
GS
GS
DS
=0V
=0V
=0V
T
= <
=-30V
=V
=0V
ch
Unit
ch
=25°C
kV/µs
kV/µs
W
°C
°C
=25°C
mJ
GS
V
V
A
A
V
A
T
T
ch
ch
=25°C
=125°C
TO-220AB
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
900
3.0
4.1
7
Typ.
Typ.
920
115
22
45
10.5
25
1.54
8.2
6.6
8
4
8.5
0.90
2.6
8.0
Source(S)
Drain(D)
1380
Max.
250
100
175
62.0
Max.
25
10
33
12
67.5
16
37.5
13
0.560
5.0
2.00
6
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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