MCP6V06-E/SN Microchip Technology Inc., MCP6V06-E/SN Datasheet - Page 4
MCP6V06-E/SN
Manufacturer Part Number
MCP6V06-E/SN
Description
Op-Amp, Auto-Zeroed, Single, High DC Precision, -40 to 125 C, SOIC-8
Manufacturer
Microchip Technology Inc.
Datasheet
1.MCP6V06-ESN.pdf
(7 pages)
Specifications of MCP6V06-E/SN
Amplifier Type
Auto-Zeroed, Low Offset Voltage, Low Power, Low Voltage, Precision, Rail-to-Rail, Single Supply
Bandwidth
1.3 MHz
Common Mode Rejection Ratio
106
Current, Input Bias
+1500 pA
Current, Input Offset
-85 pA
Current, Output
±30 mA
Current, Supply
±30 mA
Number Of Amplifiers
Single
Package Type
SOIC-8
Slew Rate
0.5
Temperature, Operating, Range
-40 to +125 °C
Voltage, Gain
147 dB
Voltage, Input
1.5 to 2.1 V
Voltage, Noise
52 nV/sqrt Hz
Voltage, Offset
+3 μV
Voltage, Output, High
1785 mV
Voltage, Output, Low
1785 mV
Voltage, Supply
1.8 to 5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP6V06-E/SN
Manufacturer:
MICROCHIP
Quantity:
12 000
TABLE 1-3:
TABLE 1-4:
© 2008 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
CS Pull-Down Resistor (MCP6V08)
CS Pull-Down Resistor
CS Low Specifications (MCP6V08)
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications (MCP6V08)
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current per
amplifier
Amplifier Output Leakage, CS High I
CS Dynamic Specifications (MCP6V08)
CS Low to Amplifier Output On
Turn-on Time
CS High to Amplifier Output High-Z
Internal Hysteresis
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-4x4 DFN
Thermal Resistance, 8L-SOIC
Note 1:
OUT
= V
2:
DD
Parameters
/2, V
Operation must not cause T
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
Parameters
L
= V
DIGITAL ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
DD
/2, R
L
= 20 kΩ to V
O_LEAK
V
Sym
I
t
R
I
V
t
HYST
V
CSL
CSH
I
I
OFF
ON
SS
SS
J
PD
IH
IL
to exceed Maximum Junction Temperature specification (150°C).
L
, C
0.7V
Sym
L
θ
θ
θ
T
T
T
Min
V
JA
JA
JA
= 60 pF, and CS = GND (refer to
—
—
—
—
—
—
—
—
A
A
A
3
SS
DD
Min
V
-40
-40
-65
—
—
—
A
DD
0.25
Typ
-0.7
-2.3
= +25°C, V
—
—
20
11
10
5
5
/R
PD
Typ
150
41
44
—
—
—
0.3V
Max Units
V
100
DD
—
—
—
—
—
—
—
—
DD
DD
= +1.8V to +5.5V, V
Max
+125
+125
+150
—
—
—
MΩ
pA
pA
µA
µA
pA
µs
µs
V
V
V
Figure 1-5
DD
Units
°C/W
°C/W
°C/W
CS = V
CS = V
CS = V
CS = V
CS = V
CS Low = V
V
CS High = V
V
°C
°C
°C
OUT
OUT
= +1.8V to +5.5V, V
= 0.9 V
= 0.1 V
MCP6V06/7/8
and
SS
DD
DD
DD
DD
(Note 1)
(Note 2)
SS
, V
, V
= GND, V
Figure
SS
DD
DD
DD
DD
DD
+0.3 V, G = +1 V/V,
Conditions
= 1.8V
= 5.5V
/2
– 0.3 V, G = +1 V/V,
/2
1-6).
Conditions
CM
SS
= V
= GND.
DS22093B-page 5
DD
/3,