DS1245Y-70+ Dallas Semiconductor, DS1245Y-70+ Datasheet - Page 5
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DS1245Y-70+
Manufacturer Part Number
DS1245Y-70+
Description
SRAM, Nonvolatile, 128k x 8, 70 nS, DIP32
Manufacturer
Dallas Semiconductor
Datasheet
1.DS1245Y-100.pdf
(7 pages)
Specifications of DS1245Y-70+
Capacitance, Input
5 pF
Capacitance, Output
5 pF
Current, Input, Leakage
±1 μA
Current, Operating
85 mA
Current, Output, Leakage
±1
Data Retention
10 yrs.
Density
1024K
Interface
Parallel Bus
Memory Type
Non-Volatile SRAM
Organization
128K×8
Package Type
740 EMOD
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Address Hold
5
Time, Fall
5 ns
Time, Rise
5 ns
Voltage, Input, High
5 V
Voltage, Input, Low
0.8 V
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from
Output Active from
Data Setup Time
Data Hold Time
OE
CE
OE
to Output Valid
to Output Valid
or
CE
to Output Active
WE
WE
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
(t
A
: See Note 10) (V
DS1245AB-100
MIN
DS1245Y-100
5 of 13
100
100
75
15
40
10
5
5
0
5
5
0
MAX
100
100
50
35
35
(V
DS1245AB-120
MIN
DS1245Y-120
CC
120
120
CC
90
15
50
10
5
5
0
5
5
0
=5V ± 5% for DS1245AB)
=5V ± 10% for DS1245Y)
MAX
120
120
60
35
35
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1245Y/AB
12
13
12
13
5
5
3
5
5
4