MAX5063AASA Maxim Integrated Products, MAX5063AASA Datasheet - Page 5
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MAX5063AASA
Manufacturer Part Number
MAX5063AASA
Description
MOSFET & Power Driver ICs 125V 2A Half-Bridge MOSFET Driver
Manufacturer
Maxim Integrated Products
Type
High Side/Low Sider
Datasheet
1.MAX5063AASA.pdf
(20 pages)
Specifications of MAX5063AASA
Rise Time
65 ns
Fall Time
65 ns
Supply Voltage (min)
8 V
Supply Current
3 mA
Maximum Power Dissipation
470.6 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Number Of Outputs
2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAX5063AASA
Manufacturer:
MAXIM/美信
Quantity:
20 000
Company:
Part Number:
MAX5063AASA+
Manufacturer:
MAXIM
Quantity:
2 000
Part Number:
MAX5063AASA+T
Manufacturer:
MAXIM/美信
Quantity:
20 000
(Typical values are at V
7.5
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
6.6
6.5
(V
-40
DD
-25
AND V
-10 5 20 35 50
UNDERVOLTAGE LOCKOUT
BST
160
140
120
100
TEMPERATURE (°C)
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
0
RISING) vs. TEMPERATURE
0
0
_______________________________________________________________________________________
UVLO
MAX5064
UVLO
1
1 2
DD
2
T
VDD
BST
A
V
vs. V
3
= +25°C, T
DD
= V
65 80
3 4 5 6 7 8 9
I
4
DDO
QUIESCENT CURRENT
BST
DD
(f
5
SW
+ I
6
(NO SWITCHING)
95
A
V
= +12V and T
V
= 0°C
T
BSTO
= 250kHz)
DD
7
DD
A
110
= -40°C
(V)
8
(V)
125
vs. V
9
10
T
A
= +125°C
11 12 13 14 15
DD
10 11
A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
= +25°C, unless otherwise specified.)
12
-40
V
13
DD
-25
Half-Bridge MOSFET Drivers
HYSTERESIS vs. TEMPERATURE
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS
-10 5 20 35 50
UVLO
VDD
TEMPERATURE (°C)
Typical Operating Characteristics
65 80
125V/2A, High-Speed,
HYSTERESIS
200
180
160
140
120
100
UVLO
80
60
40
20
21
18
15
12
0
9
6
3
0
95
0.5
0
BST
110
V
NO SWITCHING
BST
1
125
2
0.6
= V
T
T
T
T
BST QUIESCENT CURRENT
(I-V) CHARACTERISTICS
A
A
A
A
3
DD
INTERNAL BST DIODE
= +125°C
= +25°C
= 0°C
= -40°C
4
+ 1V,
500µA/div
vs. BST VOLTAGE
T
0.7
A
T
5
2V/div
A
V
= +125°C
DD
= -40°C, T
6
V
0V
0A
- V
BST
7
0.8
BST
8
(V)
MAX5064
IN_L-, IN_H- = V
IN_L+, IN_H+ = GND
(V)
A
9
= 0°C, T
0.9
10
11 12 13 14 15
A
1.0
= +25°C
I
DD
DD
40µs/div
1.1
vs. V
DD
MAX5062/3/4 toc03
V
I
5
DD
DD