BAV199T/R Philips Semiconductors, BAV199T/R Datasheet
BAV199T/R
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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage BAV199 Low-leakage double diode Product specification M3D088 ...
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... Philips Semiconductors Low-leakage double diode FEATURES Plastic SMD package Low leakage current: typ Switching time: typ. 0.8 s Continuous reverse voltage: max Repetitive peak reverse voltage: max Repetitive peak forward current: max. 500 mA. APPLICATION Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package ...
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... Philips Semiconductors Low-leakage double diode ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient ...
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... Philips Semiconductors Low-leakage double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...