K4S560832E-NC75 Samsung Semiconductor, K4S560832E-NC75 Datasheet - Page 9

• Manufacturer Part Number: K4S560832E-NC75
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S560832E-NC75

• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

DC CHARACTERISTICS (x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632E-UC
4. K4S561632E-UL
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
≤
≤
≤
RC
RC
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK
(min), CS ≥ V
(min), CLK
≤
≤
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
≤
≤
= 0 to 70°C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
/V
= ∞
= ∞
SSQ
).
C
L
140
170
200
60
Rev. 1.3 August 2004
Version
1.5
20
10
25
25
2
2
6
6
3
CMOS SDRAM
130
180
75
90
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2
3
4