K4S560832E-NC75 Samsung Semiconductor, K4S560832E-NC75 Datasheet - Page 9
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K4S560832E-NC75
Manufacturer Part Number
K4S560832E-NC75
Description
Manufacturer
Samsung Semiconductor
Type
SDRAMr
Datasheet
1.K4S560832E-NC75.pdf
(14 pages)
Specifications of K4S560832E-NC75
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
DC CHARACTERISTICS (x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632E-UC
4. K4S561632E-UL
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
≤
≤
≤
RC
RC
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK
(min), CS ≥ V
(min), CLK
≤
≤
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
≤
≤
= 0 to 70°C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
/V
= ∞
= ∞
SSQ
).
C
L
140
170
200
60
Rev. 1.3 August 2004
Version
1.5
20
10
25
25
2
2
6
6
3
CMOS SDRAM
130
180
75
90
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2
3
4