2N5666JANTX MICROSEMI, 2N5666JANTX Datasheet

2N5666JANTX

Manufacturer Part Number
2N5666JANTX
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of 2N5666JANTX

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage
250V
Emitter-base Voltage
6V
Collector Current (dc) (max)
5A
Dc Current Gain (min)
5
Power Dissipation
1.2W
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-5
Lead Free Status / Rohs Status
Not Compliant
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DEVICES
T4-LDS-0062 Rev. 1 (081095)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total
Power Dissipation
Operating & Storage Junction
Temperature Range
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
Emitter-Base Breakdown Voltage
I
Collector-Emitter Cutoff Current
V
V
Collector-Base Cutoff Current
V
V
V
V
C
E
CE
CE
CB
CB
CB
CB
= 10mAdc
= 10μAdc
= 200Vdc
= 300Vdc
= 200Vdc
= 250Vdc
= 300Vdc
= 400Vdc
Parameters / Test Conditions
Parameters / Test Conditions
1/
2N5664
2N5665
@ T
@ T
A
C
= +100°C
= +25°C
NPN POWER SILICON SWITCHING TRANSISTOR
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5666
2N5666S
2N5666U3
T
J
, T
P
C
T
= +25°C unless otherwise noted)
C
Symbol
stg
V
V
V
= +25°C, unless otherwise noted)
I
I
CEO
CBO
EBO
Qualified per MIL-PRF-19500/455
B
C
2N5664
2N5665
2.5
30
V
V
Symbol
(BR)CER
(BR)EBO
I
I
CBO
CES
2N5667
2N5667S
2N5664
2N5666, S
2N5666, S
2N5667, S
-65 to +200
200
250
1.2
15
TECHNICAL DATA SHEET
Min.
250
400
6.0
6.0
1.0
5.0
2N5666U3
2N5665
2N5667, S
300
400
1.5
Max.
35
0.2
0.2
0.1
1.0
0.1
1.0
mAdc
mAdc
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Vdc
Vdc
°C
W
TO-66 (TO-213AA)
TO-39 (TO-205AD)
2N5666S, 2N5667S
2N5664, 2N5665
2N5666, 2N5667
JANTX
JANTV
2N5666U3
LEVELS
JANS
JAN
TO-5
U-3
Page 1 of 3

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2N5666JANTX Summary of contents

Page 1

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR DEVICES 2N5664 2N5665 ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total +25°C A Power Dissipation @ T = +100° ...

Page 2

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio I = 0.5Adc 2.0Vdc 1.0Adc 5.0Vdc 3.0Adc 5.0Vdc 5.0Adc 5.0Vdc C CE Collector-Emitter Saturation Voltage ...

Page 3

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR SAFE OPERATING AREA DC Tests = 100°C, 1 Cycle, t ≥ 1.0s 10μ Test 6.0Vdc 5.0Adc 3.0Vdc 5.0Adc CE C Test 32Vdc 0.75Adc 40Vdc 0.75Adc 29Vdc 0.4Adc ...

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