LM5576MHX/HALF National Semiconductor, LM5576MHX/HALF Datasheet - Page 6

• Manufacturer Part Number: LM5576MHX/HALF
• Manufacturer: National Semiconductor

Specifications of LM5576MHX/HALF

• Lead Free Status / Rohs Status: Supplier Unconfirmed

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RAMP GENERATOR
PWM COMPARATOR
ERROR AMPLIFIER
DIODE SENSE RESISTANCE
THERMAL SHUTDOWN
THERMAL RESISTANCE
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin.
Note 3: Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical
Quality Control (SQC) methods. Limits are used to calculate National’s Average Outgoing Quality Level (AOQL).
Typical Performance Characteristics
Symbol
D
SENSE
Tsd
θ
θ
JC
JA
Ramp Current 1
Ramp Current 2
Forced Off-time
Min On-time
COMP to PWM Comparator Offset
Feedback Voltage
FB Bias Current
DC Gain
COMP Sink / Source Current
Unity Gain Bandwidth
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Junction to Case
Junction to Ambient
Oscillator Frequency vs R
Parameter
T
20189920
Vin = 60V, Vout=10V
Vin = 10V, Vout=10V
Vfb = COMP
6
Conditions
Oscillator Frequency vs Temperature
F
1.207
Min
235
416
OSC
18
3
= 200kHz
1.225
Typ
275
500
165
0.7
25
80
17
70
42
25
40
3
6
1.243
Max
315
575
32
20189921
Units
°C/W
°C/W
MHz
mΩ
mA
µA
µA
nA
dB
ns
ns
°C
°C
V
V