BYVB32-200/81 Vishay, BYVB32-200/81 Datasheet - Page 3

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BYVB32-200/81

Manufacturer Part Number
BYVB32-200/81
Description
Rectifiers 200 Volt 18A 25ns Dual Common Cathode
Manufacturer
Vishay
Datasheet

Specifications of BYVB32-200/81

Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
18 A
Max Surge Current
150 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88558
Revision: 05-May-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
150
125
100
100
20
18
16
0.1
12
75
50
25
10
8
4
0
0
1
0.1
0
1
Figure 1. Forward Current Derating Curve
0.3
25
Instantaneous Forward Voltage (V)
Case Ambient Temperature (°C)
Number of Cycles at 50 Hz
Current Per Diode
0.5
50
T
J
= 125 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
10 ms Single Half Sine-Wave
Resistive or Inductive Load
0.7
For technical questions within your region, please contact one of the following:
J
75
10
= 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
100
= 25 °C
0.9
125
1.1
150
100
1.3
BYV(F,B)32-50 thru BYV(F,B)32-200
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
100
0.1
60
50
40
30
20
10
10
0
1
Figure 5. Typical Junction Capacitance Per Diode
1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
T
C
= 100 °C
Reverse Voltage (V)
T
C
40
= 25 °C
10
60
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 5 mVp-p
80
www.vishay.com
100
100
3

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