SST5486-E3 Vishay, SST5486-E3 Datasheet - Page 5

• Manufacturer Part Number: SST5486-E3
• Description: TRANSISTOR,JFET,N-Channel,8mA,TO-236AB
• Manufacturer: Vishay

Specifications of SST5486-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 20mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage: -6V

S-50148—Rev. G, 24-Jan-05
Document Number: 70246
TYPICAL CHARACTERISTICS (T
300
240
180
120
10
10
60
8
6
4
2
0
8
6
4
2
0
0
0.1
0
0
Transconductance vs. Gate-Source Voltage
125_C
T
T
V
A
125_C
V
A
T
GS(off)
A
GS(off)
= −55_C
= 25_C
= −55_C
On-Resistance vs. Drain Current
−0.4
−0.4
= −2 V
= −2 V
V
V
Transfer Characteristics
25_C
GS
GS
I
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
D
V
− Drain Current (mA)
−0.8
−0.8
25_C
GS(off)
= −2 V
1
−1.2
−1.2
V
−3 V
DS
V
f = 1 kHz
= 10 V
DS
−1.6
−1.6
A
= 10 V
= 25_C UNLESS OTHERWISE NOTED)
−2
−2
10
100
10
10
80
60
40
20
8
6
4
2
0
8
6
4
2
0
0
0.1
0
0
Transconductance vs. Gate-Source Voltage
125_C
V
Circuit Voltage Gain vs. Drain Current
GS(off)
T
−0.6
125_C
−0.6
A
V
= −55_C
= −3 V
GS(off)
V
V
Transfer Characteristics
GS
GS
T
A
Assume V
R
A
2N/SST5484 Series
V
I
− Gate-Source Voltage (V)
L
= −3 V
− Gate-Source Voltage (V)
D
= −55_C
+
−1.2
−1.2
+
− Drain Current (mA)
V
1 ) R
10 V
GS(off)
I
25_C
25_C
D
g
DD
fs
−3 V
1
Vishay Siliconix
= 15 V, V
R
= −2 V
L
L
−1.8
−1.8
g
os
V
DS
DS
V
f = 1 kHz
= 5 V
DS
= 10 V
−2.4
−2.4
= 10 V
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−3
−3
10
5