Copyright © 2007
1-15-2007 REV C
IMPORTANT: For the most current data, consult MICROSEMI’s website:
ELECTRICAL CHARACTERISTICS
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond.
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
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NOTE 1: From 1 Amp at T
resistance from mounting point to ambient is sufficiently controlled where T
NOTE 2: T
NOTE 3: I
1N5614
1N5616
1N5618
1N5620
1N5622
derate linearly at 7.5 mA/
TYPE
Junction & Storage Temperature: -65
Thermal Resistance: 38
Thermal Impedance: 4.5
Average Rectified Forward Current (I
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
Surface mount equivalents also available in a square
inch (10 mm) lead length from body
T
PRF-19500/427
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
A
= 55ºC and 0.75 Amps @ T
F
A
VOLTAGE V
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
= 0.5A, I
= 100
MAXIMUM RATINGS
WORKING
REVERSE
VOLTS
PEAK
1000
200
400
600
800
S C O T T S D A L E D I V I S I O N
o
C, f = 60 Hz, I
FEATURES
RM
RWM
= 1A, I
o
C to 0 Amps at T
A
o
o
C/W junction to lead at 3/8
= 55
C/W @ 10 ms heating time
DESCRIPTION
BREAKDOWN
R(REC)
V
VOLTAGE
MINIMUM
BR
VOLTS
o
O
C, derate linearly at 5.56 mA/
A
1100
220
440
660
880
@ 50μA
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
= 100ºC
= 0.250A
O
o
): 1.0 Amps @
C to +200
A
= 200
55
1.00
1.00
1.00
1.00
1.00
Scottsdale Division
RECTIFIED
AVERAGE
CURRENT
o
Microsemi
(NOTE 1)
C
I
o
AMPS
o
O
C. These ambient ratings are for PC boards where thermal
C
@ T
100
A
.750
.750
.750
.750
.750
o
C
http://www.microsemi.com
VOIDLESS-HERMETICALLY-SEALED
o
C to 0.75 Amp at T
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FORWARD
VOLTAGE
1.3 MAX.
STANDARD RECOVERY GLASS
0.8 MIN.
V
VOLTS
(MAX.)
F
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
MicroNote 050
CASE: Hermetically sealed voidless hard glass with
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
Tungsten slugs (package dimensions on last page)
inventory had solid Silver axial-leads and no finish.
@ 3A
MECHANICAL AND PACKAGING
These
APPLICATIONS / BENEFITS
1N5614 thru 1N5622
J(max)
25
RECTIFIERS
does not exceed 175
0.5
0.5
0.5
0.5
0.5
CURRENT
I
o
REVERSE
R
C
A
(MAX.)
@ V
= 100
μA
RWM
100
25
25
25
25
25
o
C. From T
o
C
as described in Microsemi
APPEARANCE
MAXIMUM
CURRENT
(NOTE 2)
SURGE
AMPS
I
o
30
30
30
30
30
FSM
“A” Package
C.
A
= 100
o
C,
RECOVERY
REVERSE
(NOTE 3)
2.0
2.0
2.0
2.0
2.0
μs
t
rr
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