CMLM8205 Central Semiconductor, CMLM8205 Datasheet - Page 2

MOSFET Small Signal P-CHANNEL MOSFET SCHOTTKY DIODE

CMLM8205

Manufacturer Part Number
CMLM8205
Description
MOSFET Small Signal P-CHANNEL MOSFET SCHOTTKY DIODE
Manufacturer
Central Semiconductor
Datasheet

Specifications of CMLM8205

Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.5 Ohms
Forward Transconductance Gfs (max / Min)
200 ms
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
280 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
w w w. c e n t r a l s e m i . c o m
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
V DS(ON)
V DS(ON)
V SD
r DS(ON)
r DS(ON)
r DS(ON)
r DS(ON)
g FS
C rss
C iss
C oss
t on , t off
ELECTRICAL CHARACTERISTICS - D1: (T A =25°C)
I R
I R
BV R
V F
V F
V F
V F
V F
C T
LOW V F SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE
P-CHANNEL MOSFET AND
SURFACE MOUNT
TEST CONDITIONS
V GS =10V, I D =500mA
V GS =5.0V, I D =50mA
V GS =0, I S =115mA
V GS =10V, I D =500mA
V GS =10V, I D =500mA, T J =125°C
V GS =5.0V, I D =50mA
V GS =5.0V, I D =50mA, T J =125°C
V DS =10V, I D =200mA
V DS =25V, V GS =0, f=1.0MHz
V DS =25V, V GS =0, f=1.0MHz
V DS =25V, V GS =0, f=1.0MHz
V DD =30V, V GS =10V, I D =200mA,
R G =25Ω, R L =150Ω
V R =10V
V R =30V
I R =500μA
I F =100μA
I F =1.0mA
I F =10mA
I F =100mA
I F =500mA
V R =1.0V, f=1.0MHz
CMLM8205
SOT-563 CASE - MECHANICAL OUTLINE
MIN
200
40
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: C85
MAX
0.15
0.13
0.21
0.27
0.35
0.47
100
1.5
1.3
2.5
4.0
3.0
5.0
7.0
70
15
20
20
50
R1 (20-January 2010)
UNITS
mS
pF
pF
pF
μA
μA
pF
ns
Ω
Ω
Ω
Ω
V
V
V
V
V
V
V
V
V

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