CMRDM3575 Central Semiconductor, CMRDM3575 Datasheet

MOSFET Small Signal N AND P CHANNEL MOSFET

CMRDM3575

Manufacturer Part Number

CMRDM3575

Description

MOSFET Small Signal N AND P CHANNEL MOSFET

Manufacturer

Central Semiconductor

Datasheet

1.CMRDM3575.pdf (2 pages)

Specifications of CMRDM3575

Configuration

Single

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

1.5 Ohms, 4 Ohms

Forward Transconductance Gfs (max / Min)

1.3 S

Drain-source Breakdown Voltage

20 V

Continuous Drain Current

160 mA, 140 mA

Power Dissipation

125 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-963

Minimum Operating Temperature

- 65 C

Lead Free Status / Rohs Status

Details

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• Device is Halogen Free by design

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current, t p < 5.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C)

SYMBOL

I GSSF , I GSSR V GS =5.0V, V DS =0

I DSS

BV DSS

V GS(th)

r DS(ON)

g FS

C rss

C iss

C oss

t on

t off

COMPLEMENTARY SILICON MOSFETS

N-CHANNEL AND P-CHANNEL

ENHANCEMENT-MODE

SURFACE MOUNT

SOT-963 CASE

TEST CONDITIONS

V DS =5.0V, V GS =0

V DS =16V, V GS =0

V GS =0, I D =250μA

V DS =V GS, I D =250μA

V GS =4.5V, I D =100mA

V GS =2.5V, I D =50mA

V GS =1.8V, I D =20mA

V GS =1.5V, I D =10mA

V GS =1.2V, I D =1.0mA

V DS =5.0V, I D =125mA

V DS =15V, V GS =0, f=1.0MHz

V DD =10V, V GS =4.5V, I D =200mA

CMRDM3575

MIN TYP MAX

0.4

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMRDM3575

consists of complementary N-Channel and P-Channel

Enhancement-mode silicon MOSFETs designed for

high speed pulsed amplifier and driver applications.

These MOSFETs offer Low r DS(ON) and Low

Threshold Voltage.

MARKING CODE: CT

FEATURES:

• Power Dissipation: 125mW

• Low Package Profile: 0.5mm (MAX)

• Low r DS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small SOT-963 Surface Mount Package

N-CH (Q1)

SYMBOL

T J , T stg

V DS

V GS

Θ JA

150

P D

1.5

2.0

3.0

4.0

7.0

1.3

2.2

9.0

3.0

I D

100

1.0

3.0

4.0

6.0

N-CH (Q1)

160

200

-65 to +150

MIN TYP MAX

0.4

1000

125

8.0

P-CH (Q2)

210

4.0

5.5

8.0

1.3

1.0

2.7

140

180

w w w. c e n t r a l s e m i . c o m

100

1.0

5.0

7.0

R1 (8-February 2010)

UNITS

°C/W

°C

Related parts for CMRDM3575

CMRDM3575 Summary of contents

Page 1

... V DD =10V =4.5V =200mA t off V DD =10V =4.5V =200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low r DS(ON) and Low Threshold Voltage. MARKING CODE: CT FEATURES: • ...

Page 2

... CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS SOT-963 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE (8-February 2010) ...

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