CMLDM7484 Central Semiconductor, CMLDM7484 Datasheet

MOSFET Small Signal N AND P CHANNEL MOSFET

CMLDM7484

Manufacturer Part Number
CMLDM7484
Description
MOSFET Small Signal N AND P CHANNEL MOSFET
Manufacturer
Central Semiconductor
Datasheet

Specifications of CMLDM7484

Configuration
Single
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.46 Ohms, 1.1 Ohms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
450 mA
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMLDM7484
Manufacturer:
Central
Quantity:
69 900
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS: (T A =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS: (T A =25°C)
SYMBOL
I GSSF , I GSSR V GS =8.0V, V DS =0
I DSS
BV DSS
BV DSS
V GS(th)
V SD
V SD
r DS(ON)
r DS(ON)
r DS(ON)
r DS(ON)
r DS(ON)
r DS(ON)
Notes:
N-CHANNEL AND P-CHANNEL
COMPLEMENTARY MOSFETS
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
ENHANCEMENT-MODE
SURFACE MOUNT
SOT-563 CASE
TEST CONDITIONS
CMLDM7484
V DS =30V, V GS =0
V GS =0, I D =10μA
V GS =0, I D =100μA
V DS =V GS , I D =250μA
V GS =0, I S =400mA
V GS =0, I S =100mA
V GS =4.5V, I D =200mA
V GS =4.5V, I D =430mA
V GS =2.5V, I D =100mA
V GS =2.5V, I D =200mA
V GS =1.8V, I D =75mA
V GS =1.8V, I D =100mA
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7484
consists of complementary N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer Very Low r DS(ON) and Low
Threshold Voltage.
MARKING CODE: 8C7
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low r DS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
MIN
0.5
0.5
30
N-CH (Q1)
-
-
-
-
-
-
-
-
-
-
SYMBOL
T J , T stg
2
2
V DS
V GS
Θ JA
P D
P D
P D
I D
MAX
0.46
0.56
0.73
3.0
1.0
1.0
1.1
-
-
-
-
-
-
2
-65 to +150
MIN
0.5
0.5
30
-
-
-
-
-
-
-
-
-
-
P-CH (Q2)
450
350
300
150
357
8.0
30
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
w w w. c e n t r a l s e m i . c o m
-
-
-
-
-
-
R2 (27-January 2011)
UNITS
UNITS
°C/W
mW
mW
mW
mA
μA
μA
°C
Ω
Ω
Ω
Ω
Ω
Ω
V
V
V
V
V
V
V

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CMLDM7484 Summary of contents

Page 1

... FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7484 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low r DS(ON) and Low Threshold Voltage ...

Page 2

... CMLDM7484 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued =25°C) SYMBOL TEST CONDITIONS =10V =100mA C rss V DS =25V =0, f=1.0MHz C iss V DS =25V =0, f=1.0MHz C oss V DS =25V =0, f=1.0MHz SOT-563 - MECHANICAL OUTLINE PIN CONFIGURATION N-CH (Q1) P-CH (Q2) MIN MAX MIN MAX ...

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