J308-E3 Vishay, J308-E3 Datasheet - Page 7

• Manufacturer Part Number: J308-E3
• Description: TRANSISTOR,JFET,N-Channel,25V,12mA, TO-92
• Manufacturer: Vishay

Specifications of J308-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 60mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Mounting Type: Through Hole
• Gate-source Cutoff Voltage: -6.5V

TYPICAL CHARACTERISTICS (T
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
0.01
0.1
10
20
16
12
1
8
4
0
10
100
Equivalent Input Noise Voltage vs. Frequency
V
T
V
I
Common−Gate
D
DS
A
DG
I
= 10 mA
D
= 25_C
= 10 V
= 10 mA
= 10 V
Reverse Admittance vs. Frequency
100
I
200
D
= 1 mA
f − Frequency (MHz)
f − Frequency (Hz)
−b
rg
−g
1 k
rg
500
10 k
+g
A
rg
= 25_C UNLESS OTHERWISE NOTED)
100 k
1000
100
150
120
0.1
10
90
60
30
1
0
0.1
100
T
V
I
Common−Gate
V
D
Output Conductance vs. Drain Current
A
DG
GS(off)
= 10 mA
= 25_C
Output Admittance vs. Frequency
= 10 V
= −3 V
J/SST/U308 Series
200
I
D
f − Frequency (MHz)
− Drain Current (mA)
25_C
Vishay Siliconix
b
1
og
T
A
= −55_C
500
g
V
f = 1 kHz
og
DS
125_C
www.vishay.com
= 10 V
1000
10
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