SST4118-E3 Vishay, SST4118-E3 Datasheet - Page 4
![TRANSISTOR,JFET,N-Channel,80uA,TO-236](/photos/19/2/190261/3833576_sml.gif)
SST4118-E3
Manufacturer Part Number
SST4118-E3
Description
TRANSISTOR,JFET,N-Channel,80uA,TO-236
Manufacturer
Vishay
Datasheet
1.SST4118-E3.pdf
(6 pages)
Specifications of SST4118-E3
Power Dissipation Pd
350mW
Transistor Polarity
N Channel
Current Rating
50mA
Continuous Drain Current Id
240µA
Gate-source Breakdown Voltage
-40V
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Gate-source Cutoff Voltage
-3V
2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
100
500
400
300
200
100
100
80
60
40
20
80
60
40
20
0
0
0
0.01
0
0
T
125_C
Circuit Voltage Gain vs. Drain Current
Assume V
A
A
R
V
= −55_C
L
V
V
GS(off)
GS(off)
−0.2
+
+
−55_C
−1
V
GS(off)
T
1 ) R
10 V
V
V
Transfer Characteristics
Transfer Characteristics
A
I
= −0.7 V
GS
GS
D
= −2.5 V
DD
g
= 125_C
25_C
I
fs
D
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
= −0.7 V
= 15 V, V
R
− Drain Current (mA)
L
−0.4
L
g
−2
os
0.1
25_C
DS
= 5 V
−2.5 V
−0.6
−3
V
V
DS
DS
= 10 V
= 10 V
−0.8
A
−4
= 25_C UNLESS OTHERWISE NOTED)
−1.0
−5
1
200
160
120
300
240
180
120
2.0
1.6
1.2
0.8
0.4
80
40
60
0
0
0
0
0
0
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
125_C
f = 1 MHz
Common-Source Input Capacitance
125_C
V
T
V
A
−0.2
GS(off)
T
GS(off)
−1
= −55_C
−4
A
= −55_C
V
V
V
V
vs. Gate-Source Voltage
GS
GS
DS
GS
= −0.7 V
= −2.5 V
= 0 V
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
25_C
−0.4
−2
−8
25_C
10 V
−0.6
−3
−12
S-41231—Rev. G, 28-Jun-04
Document Number: 70239
V
f = 1 kHz
V
f = 1 kHz
DS
DS
−0.8
= 10 V
= 10 V
−16
−4
−1.0
−20
−5