DC1506A Linear Technology, DC1506A Datasheet - Page 5

• Manufacturer Part Number: DC1506A
• Description: LTC4361-1/LTC4361-2 Overvoltage/Overcurrent Protection Controller With Latchoff/Auto-Retry
• Manufacturer: Linear Technology
• Series: -r

Specifications of DC1506A

• Design Resources: DC1506 Design Files DC1506A Schematic
• Main Purpose: Overvoltage/Overcurrent Protection
• Embedded: No
• Utilized Ic / Part: LTC4361
• Primary Attributes: -
• Secondary Attributes: -
• Kit Application Type: Power Management
• Application Sub Type: Overvoltage Protection
• Features: Demonstrates Three Protection Schemes Selected At JP1, Provides Connection For USB Protection
• Lead Free Status / Rohs Status: Not applicable / Not applicable

PIN FUNCTIONS
Exposed Pad (DFN): Ground. Connection to PCB is optional.
GATE: Gate Drive for External N-Channel MOSFET. An
internal charge pump provides a 10μA pull-up current
to charge the gate of the external N-channel MOSFET. An
additional ramp circuit limits the GATE ramp rate when
turning on to 3V/ms. For slower ramp rates, connect an
external capacitor from GATE to GND. An internal clamp
limits GATE to 6V above the OUT pin voltage. An internal
GATE high comparator controls the PWRGD pin.
GATEP: Gate Drive for External P-Channel MOSFET. GATEP
connects to the gate of an optional external P-channel
MOSFET to protect against negative voltages at IN. This pin
is internally clamped to 5.8V below V
tor connects this pin to ground. Connect to IN if not used.
GND: Device Ground.
IN: Supply Voltage Input. Connect this pin to the input
power supply. This pin has an overvoltage threshold of
5.8V. After an overvoltage event, this pin must fall below
BLOCK DIAGRAM
ON
5μA
1V
IN
+
–
. An internal 2M resis-
CONTROL
CHARGE
PUMP
OVERCURRENT
COMPARATOR
OVERVOLTAGE
COMPARATOR
10μA
GND
+
–
V
ing lockout, GATE is held low and the PWRGD pull-down
releases.
ON: On Control Input. A logic low at ON enables the LTC4361.
A logic high at ON activates a low current pull-down at the
GATE pin and causes the LTC4361 to enter a low current
sleep mode. An internal 5μA current pulls ON down to
ground. Connect to ground or leave open if unused.
OUT: Output Voltage Sense Input for GATE Clamp. Connect
to the source of the external N-channel MOSFET to sense
the output voltage for GATE to OUT clamp.
PWRGD: Power Good Status. Open-drain output with
internal 500k resistive pull-up to OUT. Pulls low 65ms
after GATE ramps above V
SENSE: Current Sense Input. Connect a sense resistor
between IN and SENSE. An overcurrent protection circuit
turns off the N-channel MOSFET when the voltage across
the sense resistor exceeds 50mV for more than 10μs.
200k
1.8M
GATEP
+
IN(OV)
COMPARATOR
50mV
GATE HIGH
+
–
+
–
–
5.8V
– ∆V
V
GATE(TH)
LTC4361-1/LTC4361-2
OV
5.8V
5.7V
to release the overvoltage lockout. Dur-
IN
SENSE
GATE(TH)
500k
PWRGD
5.8V
GATE
OUT
436112 BD
.
436112fa
5