SI1441EDH-T1-GE3 Vishay

MOSFET Power 20V 4A 2.8W

SI1441EDH-T1-GE3

Manufacturer Part Number

SI1441EDH-T1-GE3

Description

MOSFET Power 20V 4A 2.8W

Manufacturer

Vishay

Specifications of SI1441EDH-T1-GE3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.034 Ohms

Forward Transconductance Gfs (max / Min)

16 S

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

10 V

Continuous Drain Current

- 4 A

Power Dissipation

2.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SC-70-6

Gate Charge Qg

22 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Related parts for SI1441EDH-T1-GE3

Related keywords

SI1441EDH-T1-GE3 component
SI1441EDH-T1-GE3 part
SI1441EDH-T1-GE3 distributor
SI1441EDH-T1-GE3 RoHS