DMG5802LFX-7 Diodes Inc, DMG5802LFX-7 Datasheet - Page 4

• Manufacturer Part Number: DMG5802LFX-7
• Description: MOSFET Power Dual N-Ch 24V Mosfet 0.98W PD
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMG5802LFX-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 1066.4pF @ 15V
• Power - Max: 980mW
• Mounting Type: Surface Mount
• Package / Case: 6-VFDFN Exposed Pad
• Lead Free Status / Rohs Status: Details

DMG5802LFX
Document number: DS35009 Rev. 2 - 2
10,000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1,000
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0
100
8
6
4
2
0
-50 -25
10
0
0
5
T , AMBIENT TEMPERATURE (°C)
Fig. 11 Gate-Charge Characteristics
A
V , DRAIN-SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
4
DS
g
Fig. 9 Typical Total Capacitance
10
0
25
C
15
I = 250µA
C
D
8
iss
rss
V
DS
I = 7A
D
C
oss
50
= 15V
20
12
I = 1mA
D
75
25
16
100
30
f = 1MHz
125 150
20
35
40
24
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100,000
10,000
1,000
20
16
12
100
8
4
0
10
0
1
0
Fig. 8 Diode Forward Voltage vs. Current
0.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
V , DRAIN-SOURCE VOLTAGE (V)
4
DS
Fig. 10 Typical Leakage Current
0.4
vs. Drain-Source Voltage
8
0.6
T = 25°C
12
A
0.8
DMG5802LFX
16
T = 150°C
T = 125°C
T = 85°C
T = 25°C
A
A
A
A
1.0
© Diodes Incorporated
20
February 2011
1.2
24