PSMN1R1-30EL,127 NXP Semiconductors, PSMN1R1-30EL,127 Datasheet - Page 11
PSMN1R1-30EL,127
Manufacturer Part Number
PSMN1R1-30EL,127
Description
MOSFET Power N-Ch 30V 1.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN1R1-30EL127.pdf
(14 pages)
Specifications of PSMN1R1-30EL,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.3 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
243 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.2V @ 1mA
Gate Charge (qg) @ Vgs
243nC @ 10V
Input Capacitance (ciss) @ Vds
14850pF @ 15V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065159127
NXP Semiconductors
8. Revision history
Table 7.
PSMN1R1-30EL
Product data sheet
Document ID
PSMN1R1-30EL v.2
Modifications:
PSMN1R1-30EL v.1
Revision history
20110415
20110203
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 15 April 2011
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Change notice
-
-
PSMN1R1-30EL
Supersedes
PSMN1R1-30EL v.1
-
© NXP B.V. 2011. All rights reserved.
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