PSMN3R5-80ES,127 NXP Semiconductors, PSMN3R5-80ES,127 Datasheet - Page 5
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PSMN3R5-80ES,127
Manufacturer Part Number
PSMN3R5-80ES,127
Description
MOSFET Power N-Ch 80V 3.5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R5-80ES127.pdf
(15 pages)
Specifications of PSMN3R5-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
135 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
139nC @ 10V
Input Capacitance (ciss) @ Vds
9961pF @ 40V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065163127
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN3R5-80ES
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
Thermal characteristics
0.05
0.02
0.2
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in I2PAK
10
Conditions
see
Vertical in free air
-3
Figure 4
10
-2
PSMN3R5-80ES
Min
-
-
10
P
-1
Typ
0.22
60
tp
T
t
p (s)
© NXP B.V. 2011. All rights reserved.
003aaf613
δ =
-
Max
0.44
tp
T
t
1
Unit
K/W
K/W
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