PSMN5R0-100ES,127 NXP Semiconductors, PSMN5R0-100ES,127 Datasheet - Page 14
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PSMN5R0-100ES,127
Manufacturer Part Number
PSMN5R0-100ES,127
Description
MOSFET Power N-Ch 100V 5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN5R0-100ES127.pdf
(14 pages)
Specifications of PSMN5R0-100ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 50V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065165127
NXP Semiconductors
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Contact information. . . . . . . . . . . . . . . . . . . . . .13
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PSMN5R0-100ES
Document identifier: PSMN5R0-100ES
Date of release: 15 April 2011
All rights reserved.