SI4467DY-T1-E3 Vishay, SI4467DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4467DY-T1-E3
• Description: MOSFET Power 12V 12A 2.5W
• Manufacturer: Vishay

Specifications of SI4467DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.011 Ohms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Document Number: 70816
S-59632—Rev. B, 12-Oct-98
0.04
0.03
0.02
0.01
40
32
24
16
8
0
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
0.5
On-Resistance vs. Drain Current
= 12 A
20
V
= 6 V
8
DS
V
Q
V
Output Characteristics
GS
g
GS
– Drain-to-Source Voltage (V)
I
1.0
D
– Total Gate Charge (nC)
= 5 thru 2 V
= 1.8 V
– Drain Current (A)
Gate Charge
16
40
1.5
24
60
2.0
V
V
GS
GS
1.5 V
1 V
= 4.5 V
= 2.5 V
32
80
2.5
100
3.0
40
14000
12000
10000
8000
6000
4000
2000
1.50
1.25
1.00
0.75
40
32
24
16
8
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
= 12 A
V
V
= 4.5 V
DS
GS
T
C
0.5
Transfer Characteristics
J
3
0
oss
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
25 C
Capacitance
25
T
C
= 125 C
Vishay Siliconix
1.0
50
6
C
iss
75
Si4467DY
100
1.5
9
–55 C
125
150
2.0
12
2-3