SI4810DY Vishay, SI4810DY Datasheet - Page 3

• Manufacturer Part Number: SI4810DY
• Description: MOSFET Power 30V 10A 2.5W
• Manufacturer: Vishay

Specifications of SI4810DY

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0135 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70802
S-31062—Rev. F, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 10 A
On-Resistance vs. Drain Current
= 15 V
V
10
1
V
8
GS
DS
Q
= 4.5 V
Output Characteristics
g
- Drain-to-Source Voltage (V)
V
I
D
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
= 10 thru 5 V
20
16
2
30
24
3
V
GS
40
32
4
= 10 V
4 V
3 V
50
40
5
3500
2800
2100
1400
700
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 10 A
rss
5
= 10 V
1
V
(MOSFET)
GS
T
V
0
Transfer Characteristics
J
DS
C
- Junction Temperature (_C)
oss
- Gate-to-Source Voltage (V)
10
- Drain-to-Source Voltage (V)
(MOSFET + Schottky)
25
Capacitance
2
C
25_C
T
iss
C
= 125_C
(MOSFET)
50
15
Vishay Siliconix
3
75
20
Si4810DY
100
- 55_C
4
25
125
www.vishay.com
150
30
5
2-3