NTD3055-150 ON Semiconductor, NTD3055-150 Datasheet - Page 7

• Manufacturer Part Number: NTD3055-150
• Description: MOSFET Power 60V 9A N-Channel
• Manufacturer: ON Semiconductor

Specifications of NTD3055-150

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.122 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 28.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

SEATING
PLANE
−T−
V
S
F
1
G
B
R
4
2
3
A
K
D
0.13 (0.005)
3 PL
J
M
T
C
PACKAGE DIMENSIONS
H
E
http://onsemi.com
NTD3055−150
CASE 369D−01
DPAK−3
ISSUE B
7
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
G
A
B
C
D
E
F
H
J
K
R
S
V
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−