MTP12P10 ON Semiconductor, MTP12P10 Datasheet - Page 3

• Manufacturer Part Number: MTP12P10
• Description: MOSFET Power 100V 12A P-Channel
• Manufacturer: ON Semiconductor

Specifications of MTP12P10

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

0.5
0.4
0.3
0.2
0.1
20
18
16
14
12
10
20
16
12
8
6
4
2
0
8
4
0
0
0
0
0
Figure 5. On−Resistance versus Drain Current
T
V
J
GS
1
4
= 25°C
Figure 1. On−Region Characteristics
= 15 V
−V
Figure 3. Transfer Characteristics
V
V
2
4
GS
8
DS
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= −55°C
= −20 V
12
I
3
D
, DRAIN CURRENT (AMPS)
T
16
4
8
J
= 100°C
25°C
25°C
20
5
−55°C
10 V
100°C
TYPICAL ELECTRICAL CHARACTERISTICS
24
12
6
28
7
V
DS
8 V
7 V
6 V
5 V
16
32
8
= 20 V
36
9
http://onsemi.com
MTP12P10
10
20
40
3
1.2
1.1
0.9
0.8
1.6
1.2
0.8
0.4
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
2
0
1
0
−50
−50
−50
Figure 2. Gate−Threshold Voltage Variation
−75
−25
V
I
Figure 4. Normalized Breakdown Voltage
D
−25
GS
= 0.25 mA
= 0
V
I
Figure 6. On−Resistance Variation
D
GS
= 6 A
0
0
= 10 V
T
T
T
0
J
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
25
25
versus Temperature
With Temperature
With Temperature
25
50
50
75
75
50
100
100
V
I
D
75
DS
= 1 mA
= V
125
125
GS
100
150
150
125
150