NTTFS4929NTWG ON Semiconductor, NTTFS4929NTWG Datasheet - Page 6
![MOSFET N-CH 30V 34A 8WDFN](/photos/30/99/309910/wdfn-8_sml.jpg)
NTTFS4929NTWG
Manufacturer Part Number
NTTFS4929NTWG
Description
MOSFET N-CH 30V 34A 8WDFN
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.NTTFS4929NTWG.pdf
(7 pages)
Specifications of NTTFS4929NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.6A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
810mW
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
17 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
10.6 A
Power Dissipation
2.11 W
Mounting Style
SMD/SMT
Fall Time
6.1 ns
Gate Charge Qg
8.8 nC
Rise Time
24 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1000
0.01
100
0.1
0.01
100
10
0.1
10
1
0.000001
1
0.1
R
Thermal Limit
Package Limit
0 V < V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
DS(on)
C
= 25°C
V
D = 0.5
DS
0.2
0.05
0.02
GS
Limit
0.01
0.1
, DRAIN−TO−SOURCE VOLTAGE (V)
SINGLE PULSE
0.00001
< 20 V
Safe Operating Area
1
0.0001
10
0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
0.01
100
t, TIME (s)
6
16
18
14
12
10
8
6
4
2
0
0.1
25
Figure 12. Maximum Avalanche Energy vs.
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
50
1
75
10
100
100
I
125
D
= 18 A
1000
150