NTMS4917NR2G ON Semiconductor, NTMS4917NR2G Datasheet
NTMS4917NR2G
Specifications of NTMS4917NR2G
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NTMS4917NR2G Summary of contents
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... I 2 (Note: Microdot may be in either location 260 °C Device L NTMS4917NR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Symbol Value Unit °C/W R 97.4 qJA R 64 qJA R 25 ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...
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25° 2 0.5 1.0 1.5 2.0 2.5 3 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. ...
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C 1100 iss 1000 900 800 700 600 500 C 400 oss 300 C rss 200 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...