BC807-25WT1G ON Semiconductor, BC807-25WT1G Datasheet - Page 5
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BC807-25WT1G
Manufacturer Part Number
BC807-25WT1G
Description
TRANS PNP GP 500MA 45V SC-70
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.BC807-25WT1G.pdf
(8 pages)
Specifications of BC807-25WT1G
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (max)
-
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 100mA, 1V
Power - Max
150mW
Frequency - Transition
100MHz
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC807-25WT1G
Manufacturer:
ON Semiconductor
Quantity:
2 100
Part Number:
BC807-25WT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
900
800
700
600
500
400
300
200
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.001
0.0001
Figure 11. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 9. DC Current Gain vs. Collector
I
C
/I
B
= 10
I
I
0.001
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
Collector Current
Current
1000
100
0.01
10
TYPICAL CHARACTERISTICS − BC807−40W
0.1
Figure 13. Current Gain Bandwidth Product
V
T
0.1
A
CE
= 25°C
= 1 V
V
0.1
−55°C
150°C
CE
25°C
I
C
1
, COLLECTOR CURRENT (A)
= 1 V
vs. Collector Current
http://onsemi.com
1
1
10
5
0.01
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
0.001
0.0001
Figure 10. Collector Emitter Saturation Voltage
Figure 12. Base Emitter Voltage vs. Collector
100
V
I
C
CE
/I
B
= 5 V
= 10
0.001
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
vs. Collector Current
1000
0.01
Current
0.01
−55°C
150°C
25°C
25°C
0.1
150°C
0.1
−55°C
1
1