MT47H128M8HQ-3E:E TR Micron Technology Inc, MT47H128M8HQ-3E:E TR Datasheet - Page 124
MT47H128M8HQ-3E:E TR
Manufacturer Part Number
MT47H128M8HQ-3E:E TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-3EE_TR.pdf
(135 pages)
Specifications of MT47H128M8HQ-3E:E TR
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
135mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 73: REFRESH Command-to-Power-Down Entry
Figure 74: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
124
1 t CK
1 x t CK
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Power-down 1
entry
entry
NOP
NOP
T2
T2
1Gb: x4, x8, x16 DDR2 SDRAM
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
© 2004 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the
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