MAX9226ETE+T Maxim Integrated Products, MAX9226ETE+T Datasheet - Page 2
![IC DESERIALIZER LP 16-TQFN](/photos/6/66/66625/16-tqfn_exp_pad_21-0136_sml.jpg)
MAX9226ETE+T
Manufacturer Part Number
MAX9226ETE+T
Description
IC DESERIALIZER LP 16-TQFN
Manufacturer
Maxim Integrated Products
Datasheet
1.MAX9226ETE.pdf
(15 pages)
Specifications of MAX9226ETE+T
Function
Serializer/Deserializer
Data Rate
200Mbps
Input Type
Parallel
Output Type
Parallel
Number Of Inputs
1
Number Of Outputs
10
Voltage - Supply
2.375 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-TQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
10-Bit, Low-Power, 10MHz-to-20MHz
Serializer and Deserializer Chipset
ABSOLUTE MAXIMUM RATINGS
V
V
Serial Interface (SDO+, SDO-, SDI+,
Single-Ended Inputs (DIN_, PCLKIN,
Single-Ended Outputs (DOUT_,
Continuous Power Dissipation (T
DC ELECTRICAL CHARACTERISTICS (MAX9225)
(V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2
SINGLE-ENDED INPUTS (PCLKIN, DIN_, PWRDN)
High-Level Input Voltage
Low-Level Input Voltage
Input Current
LCDS OUTPUT (SDO+, SDO-)
Differential Output Current
Output Short-Circuit Current
POWER SUPPLY
Supply Current
Worst-Case Pattern Supply Current
Power-Down Supply Current
DD
DDO
DD
SDI-) to GND .....................................................-0.5V to +4.0V
PWRDN) to GND ....................................-0.5V to (V
PCLKOUT) to GND ..............................-0.5V to (V
16-Pin TQFN (3mm x 3mm x 0.8mm)
Multilayer PCB (derate 20.8mW/°C
above +70°C).............................................................1667mW
Single-Layer PCB (derate 15.6mW/°C
above +70°C).............................................................1250mW
_______________________________________________________________________________________
to GND ...........................................................-0.5V to +4.0V
= +2.375V to +3.465V, T
to GND.........................................................-0.5V to +4.0V
PARAMETER
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
A
= +70°C)
SYMBOL
I
I
I
I
DDW
ODH
V
ODL
I
I
DDZ
V
I
OS
DD
IN
IH
IL
V
-0.3V ≤ V
V
High level
Low level
Shorted to 0V or V
V
V
Figure 1
All inputs = low
DDO
IN
DD
DD
DD
DD
= 0V to V
< V
= 2.5V
= 2.5V,
+ 0.5V)
+ 0.5V)
IN
IN
≤ (V
< 0V
DD
CONDITIONS
DD
+ 0.3V)
DD
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
ESD Protection (Human Body Model)
SDO+, SDO-, SDI+, SDI- to GND ...............................> ±15kV
All Other Pins to GND ...................................................> ±2kV
PCLKIN = 10MHz,
100Mbps
PCLKIN = 20MHz,
200Mbps
PCLKIN = 10MHz,
100Mbps
PCLKIN = 20MHz,
200Mbps
DD
1.19
-100
MIN
-0.3
575
200
-20
= +2.5V, T
TYP
643
229
4.7
6.2
4.7
6.2
A
= +25°C.) (Notes 1, 2)
V
DD
+100
MAX
+0.3
10.6
10.6
+20
880
300
880
8.2
8.2
0.5
+ 0.3
UNITS
mA
mA
µA
µA
µA
µA
V
V