DS25BR120TSD/NOPB National Semiconductor, DS25BR120TSD/NOPB Datasheet - Page 8

• Manufacturer Part Number: DS25BR120TSD/NOPB
• Description: IC BUFFER LVDS 3.125GBPS 8-LLP
• Manufacturer: National Semiconductor
• Type: Bufferr

Specifications of DS25BR120TSD/NOPB

• Tx/rx Type: LVDS
• Delay Time: 465ps
• Capacitance - Input: 1.7pF
• Voltage - Supply: 3 V ~ 3.6 V
• Current - Supply: 106mA
• Mounting Type: Surface Mount
• Package / Case: 8-LLP
• Device Type: Differential Buffer
• Supply Current Max: 43mA
• Peak-to-peak Jitter Max: 65ps
• Signaling Rate: 3.125Gbps
• Signal Input Type: LVDS
• Output Level Type: LVDS
• Supply Voltage Range: 3V To 3.6V
• Rohs Compliant: Yes
• Supply Current: 43mA
• Driver Case Style: LLP
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Msl: MSL 3 - 168 Hours
• Amplifier Output: Fully Differential
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DS25BR120TSDTR

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Pre-Emphasis Test Circuits
Test Channel Loss Characteristics
The test channel was fabricated with Polyclad PCL-FR-370-Laminate/PCL-FRP-370 Prepreg materials (Dielectric constant of 3.7
and Loss Tangent of 0.02). The edge coupled differential striplines have the following geometries: Trace Width (W) = 5 mils, Gap
(S) = 5 mils, Height (B) = 16 mils.
Test Channel
A
B
C
D
E
F
(inches)
Length
10
20
30
15
30
60
500 MHz
FIGURE 5. Pre-emphasis Performance Test Circuit
-1.2
-2.6
-4.3
-1.6
-3.4
-7.8
FIGURE 6. Test Channel Description
750 MHz
-10.3
-1.7
-3.5
-5.7
-2.2
-4.5
8
1000 MHz
-12.4
Insertion Loss (dB)
-2.0
-4.1
-7.0
-2.7
-5.6
30005428
1250 MHz
-14.5
-2.4
-4.8
-8.2
-3.2
-6.6
1500 MHz
-16.6
-2.7
-5.5
-9.4
-3.7
-7.7
1560 MHz
30005427
-17.0
-2.8
-5.6
-9.7
-3.8
-7.9