MT47H64M8CF-187E:G Micron Technology Inc, MT47H64M8CF-187E:G Datasheet - Page 125
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MT47H64M8CF-187E:G
Manufacturer Part Number
MT47H64M8CF-187E:G
Description
IC DDR2 SDRAM 512MB 60FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT47H32M16HR-3F.pdf
(132 pages)
Specifications of MT47H64M8CF-187E:G
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8CF-187E:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 78: RESET Function
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Bank address
Command
Address
ODT
DQS 3
DM 3
CK#
CKE
A10
DQ 3
R
CK
TT
Bank a
READ
Col n
T0
High-Z
High-Z
Notes:
NOP 2
T1
1. V
2. Either NOP or DESELECT command may be applied.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS
4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the
5. Initialization timing is shown in Figure 41 (page 86).
represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri-
ate configuration (x4, x8, x16).
completion of the burst.
DD
Bank b
Col n
READ
, V
T2
DDL
, V
DDQ
NOP 2
Indicates a break in
time scale
T3
, V
DO
TT
, and V
DO
NOP 2
T4
125
System
DO
RESET
REF
must be valid at all times.
t DELAY
Unknown
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
1
R
TT
On
High-Z
High-Z
Transitioning Data
t CL
© 2004 Micron Technology, Inc. All rights reserved.
t CK
Start of normal 5
initialization
t CL
sequence
NOP 2
Ta0
4
T = 400ns (MIN)
t CKE (MIN)
All banks
Tb0
PRE
Don’t Care
High-Z
t RPA
Reset
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