PE42556DI-Z Peregrine Semiconductor, PE42556DI-Z Datasheet

PE42556DI-Z

Manufacturer Part Number

PE42556DI-Z

Description

IC RF SWITCH SPDT FLIP CHIP

Manufacturer

Peregrine Semiconductor

Series

UltraCMOS™, HaRP™r

Datasheet

1.PE42556.pdf (9 pages)

Specifications of PE42556DI-Z

Rf Type

Cellular

Frequency

9kHz ~ 13.5GHz

Features

SPDT

Package / Case

14-XFBGA, FCDSBGA

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

PE42556DI-Z

Manufacturer:

pSemi/Peregrine

Quantity:

3 657

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Document No. 70-0300-01 │ www.psemi.com

Contact sales@psemi.com for full version of datasheet

RF1

Figure 1. Functional Diagram

Figure 2. Die Top View (Bump Side Up)

Figure 3. Package Type: Flip Chip

ESD

50Ω

GND

RF1

Vdd

D-GND

DGND

CTRL

RFC

Control

CMOS

Driver

RFC

CTRL

D-GND

GND

Vss

GND

RF2

50Ω

ESD

RF2

Product Brief

PE42556 Flip Chip

SPDT UltraCMOS™ RF Switch

9 kHz - 13500 MHz

Features

Product Description

The PE42556 RF Switch is designed for use in

Test/ATE, cellular and other wireless

applications. This broadband general purpose

switch maintains excellent RF performance and

linearity from 9kHz through 13500 MHz. The

PE42556 integrates on-board CMOS control

logic driven by a single-pin, low voltage CMOS

control input. It also has a logic select pin which

enables changing the logic definition of the

control pin. Additional features include a novel

user defined logic table, enabled by the on-

board CMOS circuitry. The PE42556 also

exhibits excellent isolation of 26 dB at 13500

MHz, fast settling time, and is offered in a tiny

Flip Chip package.

The PE42556 is manufactured on Peregrine’s

UltraCMOS™ process, a patented variation of

silicon-on-insulator (SOI) technology on a

sapphire substrate, offering the performance of

GaAs with the economy and integration of

conventional CMOS.

HaRP™-Technology-Enhanced

Next Gen 0.25 µm Process Technology

Single-pin 3.3 V CMOS logic control

High Isolation: 26 dB@ 13.5 GHz

Low Insertion Loss: 1.7 dB @ 13.5 GHz

P1dB: 33 dBm typical

Return Loss: 13 dB @ 13.5 GHz (typ)

IIP3: +56 dBm typical

Exceptional ESD: 4000 V HBM

Absorptive Switch Design

Flip Chip packaging

Eliminates Gate Lag

No insertion loss or phase drift

Fast settling time

Page 1 of 9

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