MMDT5451-7-F Diodes Zetex, MMDT5451-7-F Datasheet - Page 2

• Manufacturer Part Number: MMDT5451-7-F
• Manufacturer: Diodes Zetex

Specifications of MMDT5451-7-F

• Transistor Polarity: NPN/PNP
• Number Of Elements: 2
• Collector-emitter Voltage: 160/150V
• Collector-base Voltage: 180/160V
• Emitter-base Voltage: 6/5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 80
• Power Dissipation: 200mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics, NPN 5551 Section
Electrical Characteristics, PNP 5401 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30171 Rev. 9 - 2
6. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
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V
V
V
V
V
V
Symbol
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
(BR)EBO
CE(SAT)
BE(SAT)
BE(SAT)
I
I
C
I
I
C
h
h
CBO
EBO
NF
CBO
EBO
NF
h
h
f
f
obo
obo
FE
FE
T
T
fe
fe
2 of 5
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
-160
-150
Min
180
160
100
Min
-5.0
100
6.0
80
80
30
50
50
60
50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.15
0.20
Max
-0.2
-0.5
-1.0
250
250
300
240
200
300
1.0
6.0
8.0
-50
-50
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
nA
μA
nA
pF
dB
nA
μA
nA
pF
dB
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
CB
CB
EB
CB
CE
CE
CE
S
S
= 10μA, I
= 10mA, I
= 10mA, I
= -10μA, I
= -10mA, I
= -10mA, I
= 100μA, I
= 1.0mA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= -100μA, I
= -1.0mA, I
= -1.0mA, V
= -10mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= 10Ω, f = 1.0kHz
= 4.0V, I
= 10V, I
= 5.0V, I
= -3.0V, I
= -10V, I
= -5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
= -120V, I
= -120V, I
= -10V, f = 1.0MHz, I
= -10V, I
C
Test Condition
B
B
Test Condition
B
B
C
C
C
C
E
B
C
B
B
B
B
C
C
= 0
E
E
E
B
C
C
CE
CE
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 0
= 10mA,
E
E
= 0
= 0
= 0
= 200μA,
= -1.0mA
= -1.0mA
= -5.0mA
= -5.0mA
= -1.0mA,
= -10mA,
CE
CE
CE
= 0
= 0, T
= 0
= 0
= 0
= -200μA,
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
= -5.0V
= -5.0V
= -5.0V
A
A
= 100°C
= 100°C
© Diodes Incorporated
E
E
= 0
= 0
MMDT5451