MMDT5451-7-F Diodes Zetex, MMDT5451-7-F Datasheet - Page 2
![](/photos/31/41/314192/31-sot-363_sml.jpg)
MMDT5451-7-F
Manufacturer Part Number
MMDT5451-7-F
Description
Manufacturer
Diodes Zetex
Datasheet
1.MMDT5451-7-F.pdf
(5 pages)
Specifications of MMDT5451-7-F
Transistor Polarity
NPN/PNP
Number Of Elements
2
Collector-emitter Voltage
160/150V
Collector-base Voltage
180/160V
Emitter-base Voltage
6/5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
80
Power Dissipation
200mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMDT5451-7-F
Manufacturer:
Diodes Inc
Quantity:
26 571
Company:
Part Number:
MMDT5451-7-F
Manufacturer:
JRC
Quantity:
26 000
Part Number:
MMDT5451-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics, NPN 5551 Section
Electrical Characteristics, PNP 5401 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30171 Rev. 9 - 2
6. Short duration pulse test used to minimize self-heating effect.
Characteristic
Characteristic
www.diodes.com
V
V
V
V
V
V
Symbol
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
(BR)EBO
CE(SAT)
BE(SAT)
BE(SAT)
I
I
C
I
I
C
h
h
CBO
EBO
NF
CBO
EBO
NF
h
h
f
f
obo
obo
FE
FE
T
T
fe
fe
2 of 5
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
-160
-150
Min
180
160
100
Min
-5.0
100
6.0
80
80
30
50
50
60
50
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
0.15
0.20
Max
-0.2
-0.5
-1.0
250
250
300
240
200
300
1.0
6.0
8.0
-50
-50
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MHz
MHz
Unit
Unit
nA
μA
nA
pF
dB
nA
μA
nA
pF
dB
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
CB
CB
EB
CB
CE
CE
CE
S
S
= 10μA, I
= 10mA, I
= 10mA, I
= -10μA, I
= -10mA, I
= -10mA, I
= 100μA, I
= 1.0mA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
= -100μA, I
= -1.0mA, I
= -1.0mA, V
= -10mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= 10Ω, f = 1.0kHz
= 4.0V, I
= 10V, I
= 5.0V, I
= -3.0V, I
= -10V, I
= -5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
= -120V, I
= -120V, I
= -10V, f = 1.0MHz, I
= -10V, I
C
Test Condition
B
B
Test Condition
B
B
C
C
C
C
E
B
C
B
B
B
B
C
C
= 0
E
E
E
B
C
C
CE
CE
CE
= 1.0mA
= 5.0mA
= 1.0mA
= 5.0mA
= 1.0mA,
= 0
= 10mA,
E
E
= 0
= 0
= 0
= 200μA,
= -1.0mA
= -1.0mA
= -5.0mA
= -5.0mA
= -1.0mA,
= -10mA,
CE
CE
CE
= 0
= 0, T
= 0
= 0
= 0
= -200μA,
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
= -5.0V
= -5.0V
= -5.0V
A
A
= 100°C
= 100°C
© Diodes Incorporated
E
E
= 0
= 0
MMDT5451