ADG713BR-REEL Analog Devices Inc, ADG713BR-REEL Datasheet - Page 2

• Manufacturer Part Number: ADG713BR-REEL
• Description: IC SWITCH QUAD SPST 16SOIC
• Manufacturer: Analog Devices Inc

Specifications of ADG713BR-REEL

• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 4 x SPST - NC/NO
• On-state Resistance: 4 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Current - Supply: 0.001µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)

ADG711/ADG712/ADG713–SPECIFICATIONS
Parameter
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
ANALOG SWITCH
Temperature range: B Version: –40°C to +85°C.
Guaranteed by design, not subject to production test.
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
Analog Signal Range
OFF
ON
DD
S
D
D
I
Channels (∆R
(ADG713 Only)
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
2.5
4
0.5
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
0.005
11
6
6
3
–58
–78
–90
200
10
10
22
0.001
+25 C
B Version
–40 C to
+85 C
0 V to V
4.5
0.05
0.3
1.0
± 0.2
± 0.2
± 0.2
2.4
0.8
± 0.1
16
10
1
1.0
–2–
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
1
(V
–40 C to +85 C unless otherwise noted.)
DD
= +5 V
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
R
Test Circuit 7
R
Test Circuit 8
R
V
Digital Inputs = 0 V or 5 V
S
S
S
DD
S
S
S
IN
S
S
S1
S
L
DD
L
L
L
L
L
L
= 0 V to V
= 0 V to V
= 0 V to V
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V; Test Circuit 4
= 3 V; Test Circuit 4
= 2 V; R
= 50 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= +5.5 V;
= +5.5 V
D
S2
INL
10%, GND = 0 V. All specifications
= 1 V, or 4.5 V;
= 3 V; Test Circuit 5
or V
S
L
= 0 Ω, C
L
L
L
DD
DD
DD
= 5 pF, f = 10 MHz
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz;
= 5 pF; Test Circuit 9
INH
, I
, I
, I
= 35 pF,
= 35 pF,
= 35 pF,
D
D
S
S
S
= 1 V/4.5 V;
= 1 V/4.5 V;
= –10 mA;
= –10 mA
= –10 mA
L
= 1 nF;
REV. A